After six month of welding, cutting, sanding and sleeping on the old couch in the lab, Team UP Dagisik from University of Philippines Electrical & Electronics Engineering Institute will travel to Sepang International Circuit near Kuala Lumpur, along with its newly built battery-powered concept car, for the Shell Eco-marathon Asia 2019 from April 29 to May 2. Contending for its first championship since 2015, the team sees its strength in great chemistry among teammates built through years of close collaboration in academic work, as well as their internship with Power Integrations last summer.
Shell Eco-marathon Asia 2019, the Asian leg of Shell’s global competition for science and engineering students to build ultra-efficient cars, will be held at Sepang International Circuit, Kuala Lumpur from April 29 to May 2. Objective of the race is to navigate the circuit using the least amount of energy. In jeopardy of missing the competition just 9 months ago, Team UP Dagisik from University of Philippines Electrical & Electronics Engineering Institute recently finished a successful test run of its newly built battery-power concept vehicle.
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a range of galvanically isolated transformers that provide the correct voltage and power for the company’s SCALE-iDriver™ family of gate drivers. The combination delivers a simple, robust and cost-efficient DC-DC converter solution that does not require additional voltage regulation, reducing system cost and development time.
Visit Power Integrations at APEC 2019 in Anaheim, California and learn more about our latest innovation in AC-DC converters, LED drivers, gate drivers and motor drivers.
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K SCALE-iDriver, a high-efficiency, single-channel silicon carbide (SiC) MOSFET gate driver that delivers the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC-MOSFETs today.