On February 13th, Power Integrations will present a session at the ECPE Tutorial: Drivers and Control Circuitry for IGBTs and MOSFETs event in Bristol, UK. In it, we will discuss techniques to safely and effectively control both IGBT and MOSFET gates. You can find out more and register for this event on the ECPE website here.
Power Integrations today introduced the newest member of its SCALE-iDriver™ IC family, SID1102K, a single-channel, isolated, IGBT and MOSFET gate driver in a wide-body eSOP package. Featuring a peak drive current of up to 5 A, the new part is able to drive 300 A switches without boosters; external boosters can be used to cost-effectively scale gate current up to 60 A peak. This device provides N-channel drive for both the low and high side booster MOSFET switches which reduces system cost, minimizes switching losses and increases power capability.
Power Integrations, the leader in high-voltage integrated circuits for energy-efficient power conversion, announced the opening of a new location in Penang, Malaysia. The facility will serve as a production-support and R&D center as well as an operations hub from which the company will manage its Asian supply chain.
Visit Power Integrations at the 2017 SPS IPC Drives exhibition in Nuremberg, Germany to learn about our latest innovations in AC-DC converters and gate driver products. Our team of technical specialists will be on-site for all three days to offer you application solutions, insights and details on our products.
SPS IPC Drives
November 28, 2017 to November 30, 2017
Exhibition Centre Nuremberg