SIC118xKQ

Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications

Typical Application Schematic

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SIC118xKQ Data Sheet

Up to 8 A Single Channel SiC MOSFET and IGBT Gate Driver for Automotive Applications Providing Advanced Active Clamping and Reinforced Isolation up to 1200 V

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SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side, and rail-to-rail output with temperature and process compensated output impedance, guarantee safe operation even in harsh conditions.

SIC118xKQ also features short-circuit protection (at and during turn-on phase), and overvoltage limitation through Advanced Active Clamping (at turn-off phase) via a single sensing pin. For SIC MOSFETs with a current-sense terminal, adjustable over-current detection can be realized.

Applications

Key Benefits

Highly Integrated, Compact Footprint

±8 A peak gate output current
Integrated FluxLink™ technology provides reinforced isolation
SiC MOSFET optimized Advanced Active Clamping
Ultrafast short-circuit detection
UVLO primary and secondary side
Rail-to-rail stabilized output voltage
Unipolar supply voltage for secondary-side
Up to 150 kHz switching frequency
Propagation delay jitter ±5 ns
-40 °C to +125 °C operating ambient temperature
High common-mode transient immunity
eSOP package with 9.5 mm creepage and clearance, CTI 600

Protection / Safety Features

Undervoltage lock-out protection for primary and secondary-side, including fault feedback
Over-current detection for SiC MOSFETs with a current-sense terminal
Ultrafast short-circuit monitoring, turn-off and reporting
Advanced Active Clamping (AAC) provides overvoltage limitation during SiC MOSFET turn-off