Up to 8 A Single Channel SiC MOSFET and IGBT Gate Driver for Automotive Applications Providing Advanced Active Clamping and Reinforced Isolation up to 1200 V
SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical).
Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side, and rail-to-rail output with temperature and process compensated output impedance, guarantee safe operation even in harsh conditions.
SIC118xKQ also features short-circuit protection (at and during turn-on phase), and overvoltage limitation through Advanced Active Clamping (at turn-off phase) via a single sensing pin. For SIC MOSFETs with a current-sense terminal, adjustable over-current detection can be realized.