Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications

Typical Application Schematic

Data Sheets

SIC118xKQ Data Sheet

Up to 8 A Single Channel SiC MOSFET and IGBT Gate Driver for Automotive Applications Providing Advanced Active Clamping and Reinforced Isolation up to 1200 V
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Product Details

SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side, and rail-to-rail output with temperature and process compensated output impedance, guarantee safe operation even in harsh conditions.

SIC118xKQ also features short-circuit protection (at and during turn-on phase), and overvoltage limitation through Advanced Active Clamping (at turn-off phase) via a single sensing pin. For SIC MOSFETs with a current-sense terminal, adjustable over-current detection can be realized.


Key Benefits

Highly Integrated, Compact Footprint

  • ±8 A peak gate output current
  • Integrated FluxLink™ technology provides reinforced isolation
  • SiC MOSFET optimized Advanced Active Clamping
  • Ultrafast short-circuit detection
  • UVLO primary and secondary side
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Up to 150 kHz switching frequency
  • Propagation delay jitter ±5 ns
  • -40 °C to +125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance, CTI 600

Protection / Safety Features

  • Undervoltage lock-out protection for primary and secondary-side, including fault feedback
  • Over-current detection for SiC MOSFETs with a current-sense terminal
  • Ultrafast short-circuit monitoring, turn-off and reporting
  • Advanced Active Clamping (AAC) provides overvoltage limitation during SiC MOSFET turn-off

Full Safety and Regulatory Compliance

  • 100% production partial discharge test
  • 100% production HIPOT compliance testing at 8000 V peak for 1 s
  • Reinforced insulation pending VDE V 0884-11 certification
  • UL 1577 recognized
  • AEC Q-100 qualified for automotive grade level 1

Green Package

  • Halogen free and RoHS compliant


  • Electric vehicle BEV traction drives
  • Hybrid electric vehicle PHEV traction drives
  • Electric vehicle on-board and off-board chargers

Product Portfolio

Product1Peak Output Drive CurrentSwitch Rating
SIC1181KQ8.0 A750 V
SIC1182KQ8.0 A1200 V


  1. Package - K: eSOP-R16B.

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