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SID11x1K

Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Galvanic Isolation up to 650 V Blocking Voltage

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Product Parts
Product
Data Sheet
IGBT Voltage Class
Gate Peak Current (Max)
Max Switching Frequency
Supported Module Type
Logic Input Voltage
Protection Features
Technology
Interface Type
Supported Topologies
Supply Voltage (Typ)
Isolation Type
Isolation Technology
Time - Output Rise
Time - Output Fall
Driving Mode
Main/Peripheral
Paralleling Support?
IGBT Voltage Class 1200 V
Gate Peak Current (Max) +5 A
Max Switching Frequency 75.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Basic
Isolation Technology Fluxlink
Time - Output Rise 22 ns
Time - Output Fall 18 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No
IGBT Voltage Class 1200 V
Gate Peak Current (Max) +8 A
Max Switching Frequency 75.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Basic
Isolation Technology Fluxlink
Time - Output Rise 22 ns
Time - Output Fall 18 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No

Product Details

The SID11x1K is a single channel IGBT and MOSFET driver in an eSOP package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink technology. 8 A peak output drive current enables the product to drive devices up to 600 A (typical) without requiring any additional active components. For gate drive requirements that exceed the stand-alone capability of the SID11x1K’s, an external amplifier (booster) may be added. Stable positive and negative voltages for gate control are provided by one unipolar isolated voltage source.

Additional features such as short-circuit protection (DESAT) with Advanced Soft Shut Down (ASSD), undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with temperature and process compensated output impedance guarantee safe operation even in harsh conditions.

Controller (PWM and fault) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider.

Highly Integrated, Compact Footprint

  • Split outputs providing up to 8 A peak drive current
  • Integrated FluxLink™ technology
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Suitable for 600 V / 650 V / 1200 V IGBT and MOSFET switches
  • Providing reinforced isolation up to 650 V blocking voltage
  • Providing basic isolation up to 1200 V blocking voltage
  • Up to 75 kHz switching frequency
  • Low propagation delay time 260 ns
  • Propagation delay jitter ±5 ns
  • -40 °C to 125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance

Advanced Protection / Safety Features

  • Undervoltage lock-out (UVLO) protection for primary and secondary-side and fault feedback
  • Short-circuit protection using VCESAT monitoring and fault feedback
  • Advanced soft shut down (ASSD)

Full Safety and Regulatory Compliance

  • 100% production partial discharge test
  • 100% production HIPOT compliance testing at 6 kV RMS 1 s
  • Reinforced insulation according to VDE 0884-10 is pending

Green Package

  • Halogen free and RoHS compliant

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